1 ELM34801AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 20 v continuous drain current ta=25c id -6 a ta=70c -5 pulsed drain current idm -30 a 3 power dissipation ta=25c pd 2.5 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34801AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-6a ? rds(on) < 50m (vgs=-10v) ? rds(on) < 80m (vgs=-4.5v) dual p-channel mosfet s 1 g1 d1 s 2 g2 d2 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8
2 ELM34801AA-N electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v, vgs= 0v, tj=125 c -10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -0.9 -1.5 -3.0 v on state drain current id(on) vgs=-10v, vds=-5v -30 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 6a 40 50 m 1 vgs =-4. 5v, id =-5 a 65 80 m forward transconductance gfs vds =- 10v, id =-6 a 16 s 1 diode forward voltage vsd if =- 1a, vgs=0v -1.2 v 1 max. body -diode continuous curren is -2.1 a pulsed current ism -4 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 530 pf output capacitance coss 135 pf reverse transfer capacitance crss 70 pf switching parameters total gate charge qg vgs=-10v, vds=-15v id=-6a 10.0 14.0 nc 2 gate-source charge qgs 2.2 nc 2 gate-drain charge qgd 2.0 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rl=1, rgen=6 5.7 ns 2 turn - on rise time tr 10.0 ns 2 turn - off delay time td(off) 18.0 ns 2 turn - off fall time tf 5.0 ns 2 body diode reverse recovery time trr if = -5a, dl/dt=100a/ s 15.5 ns body diode reverse recovery charge qrr if = -5a, dl/dt=100a/ s 7.9 nc dual p-channel mosfet note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. 4 -
3 typical electrical and thermal characteristics ELM34801AA-N dual p-channel mosfet 4 - dual p - channel logic level enhancement mode field effect transistor p06b03lv g sop - 8 lead free niko - sem 3 may - 0 4 - 200 5
4 ELM34801AA-N dual p-channel mosfet 4 - dual p - channel logic level enhancement mode field effect transistor p06b03lv g sop - 8 lead free niko - sem 4 may - 0 4 - 200 5
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